Research in a DFG project as a part of the priority programme "GaNius" in the area of modern wide-bandgap-power semiconductors. The possibility of a doctorate is given.

• Expansion of methods and test capabilities for trapping-related characterization of GaN power devices
• Experimental characterization and analysis of GaN-on-Si-semiconductors
• Analysis of long-term stability of GaN semiconductors
• Characterization of GaN-semiconductors using temperatures up to 175 °C

• Successfully completed university degree (Master, Diplom or equivalent) in electrical engineering;
• We expect very good knowledge of power electronics, wide-bandgap-power semiconductors, measurement techniques and experiences in electronic hardware development
• Solid foundations of scientific work and writing are expected
• Good knowledge of German and/or English (written and spoken) required; willingness to acquire the respective missing language skills

Desirable:

• Practical experience in the development of power electronics as well as programming of Field Programmable GateArray (FGPA) and of microcontrollers are of advantage and highly appreciated.

Please send your application with the reference number and the usual documents including language certificates by e-mail to Prof. Dr. Sibylle Dieckerhoff (sekr@pe.tu-berlin.de).

By submitting your application via email you consent to having your data electronically processed and saved. Please note that we do not provide a guaranty for the protection of your personal data when submitted as unprotected file. Please find our data protection notice acc. DSGVO (General Data Protection Regulation) at the TU staff department homepage: https://www.abt2-t.tu-berlin.de/menue/themen_a_z/datenschutzerklaerung.

To ensure equal opportunities between women and men, applications by women with the required qualifications are explicitly desired. Qualified individuals with disabilities will be favored. The TU Berlin values the diversity of its members and is committed to the goals of equal opportunities. Applications from people of all nationalities and with a migration background are very welcome.

Technische Universität Berlin - Die Präsidentin - Fakultät IV, Institut für Energie- und Automatisierungstechnik, FG Leistungselektronik, Prof. Dr.-Ing. Sibylle Dieckerhoff, Sekr. E 2, Einsteinufer 19, 10587 Berlin